2019•Microsystem TechnologiesRequires access

Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier

Krishnpriya Sinha, Shashank Kumar Dubey, Aminul Islam

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Key concepts: Transconductance, Barrier layer, High-electron-mobility transistor, Materials science, Optoelectronics, Nitride, Noise figure, Noise (video)

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Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier — Research Paper | ScholarLens