Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions
Chun‐Ying Huang, Pei-Te Lin, Hao-Che Cheng, Fang‐Chi Lo, Po-Sheng Lee, Yu-Wun Huang, Qiyu Huang, Yu-Chien Kuo, Shan-Wen Lin, Yuru Liu
Abstract
Chun‐Ying Huang, Pei-Te Lin, Hao-Che Cheng, Fang‐Chi Lo, Po-Sheng Lee, Yu-Wun Huang, Qiyu Huang, Yu-Chien Kuo, Shan-Wen Lin, Yuru Liu
Abstract
An abstract is not available in the OpenAlex record for this paper.
OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
Key concepts: Schottky diode, Schottky barrier, Metal–semiconductor junction, Materials science, Optoelectronics, Diode, Work function, Equivalent series resistance