N.G. Anantha, K.G. Ashar
Abstract
Planar silicon technology has been used to fabricate mesa Schottky barrier diodes with high breakdown voltages. This method proves to be superior to alternate methods used to increase the breakdown voltage of Schottky diodes. The processing techniques and characteristics of mesa Schottky diodes are described in this paper.
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Planar silicon technology has been used to fabricate mesa Schottky barrier diodes with high breakdown voltages. This method proves to be superior to alternate methods used to increase the breakdown voltage of Schottky diodes. The processing techniques and characteristics of mesa Schottky diodes are described in this paper.
Key concepts: Schottky diode, Schottky barrier, Optoelectronics, Diode, Metal–semiconductor junction, Materials science, Breakdown voltage, Planar