徐宏霞 XU Hong-xia, 邹忠飞 ZOU Zong-fei, 董承远 DONG Cheng-yuan
Abstract
在传统集成栅驱动电路中采用非晶InGaZnO薄膜晶体管（a-IGZO TFT）后会造成信赖性的降低，经过分析确定原因为驱动TFT阈值电压漂移。本文提出了一种改进的集成栅驱动电路，通过对驱动TFT栅节点电压的稳定控制，获得了较大的驱动TFT阈值电压漂移冗余度（从原来的不到±-3 V扩大到±-9 V），克服了a-IGZO TFT阈值电压漂移所造成的电路失效，稳定了集成栅驱动电路并延长了液晶显示器面板的寿命。
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在传统集成栅驱动电路中采用非晶InGaZnO薄膜晶体管（a-IGZO TFT）后会造成信赖性的降低，经过分析确定原因为驱动TFT阈值电压漂移。本文提出了一种改进的集成栅驱动电路，通过对驱动TFT栅节点电压的稳定控制，获得了较大的驱动TFT阈值电压漂移冗余度（从原来的不到±-3 V扩大到±-9 V），克服了a-IGZO TFT阈值电压漂移所造成的电路失效，稳定了集成栅驱动电路并延长了液晶显示器面板的寿命。
Key concepts: Thin-film transistor, Materials science, Optoelectronics, Oxide thin-film transistor, Computer science, Electrical engineering, Nanotechnology, Engineering