Patterned Al-Ge Wafer Bonding for Reducing In-Process Side Leakage of Eutectic

This paper proposes a new Al-Ge eutectic bonding method for MEMS hermetical packaging based on network-like patterning. This kind of patterning provides inner space for eutectic metals to fill inside when Al and Ge turn into liquid phase at their eutectic melting point during bonding process. This is a very promising alternative approach to eutectic bonding that improves the reliability of the bonding procedure with a low requirement for temperature and pressure control. Preliminary experimental results shows an acceptable reduction of the eutectic side leakage.