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2018•Journal of Crystal GrowthOpen access

Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

X.F. Liu, G.G. Yan, Zhongshan Shen, Zheng Xin Wen, Jintong Chen, Yize He, Wei Zhao, Li Wang, Min Guan, Feng Zhang, G.S. Sun, Y.P. Zeng

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Key concepts: Wafer, Susceptor, Chemical vapor deposition, Epitaxy, Materials science, Raman spectroscopy, Optoelectronics, Deposition (geology)

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