A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor

An improved continuous method of the epitaxial growth of silicon is employed for SiCl 4 -H 2 system. In this system the epitaxial growth is carried out just after in-situ etching by passing a line of wafers through the furnace which has one each of high and low temperature regions. The profiles of epitaxial layer thickness and carrier concentration in a single wafer were obtained and the average of these values for each wafer in a single run is calculated and listed in the tables. These results show a high degree of uniformity.