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2018•CrystEngCommRequires access

Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

Xu‐Qiang Shen, Kazutoshi Kojima, Mitsuaki Shimizu, Hajime Okumura

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Abstract

We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth.

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What this paper is about

We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth.

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OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth.

Key concepts: Metalorganic vapour phase epitaxy, Epitaxy, Ammonia, Vapor phase, Materials science, Phase (matter), Quality (philosophy), Optoelectronics

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