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Growth of GaAs epitaxial layers prepared in the laboratory with an integrated safety MOCVD system

Tetsuji Imai, Shunro Fuke, Katsumi Mori, Kazuhiro Kuwahara

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Key concepts: Metalorganic vapour phase epitaxy, Epitaxy, Gallium arsenide, Materials science, Substrate (aquarium), Optoelectronics, Doping, Gallium

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