4‐3: Solution Synthesis of High‐Quality Indium‐Nitride Quantum Dots
Junki Nagakubo, Masaaki Hirakawa, Takahiro Sawada, Tsutomu Nishihashi, Kazumasa Horita, Hirohiko Murakami
Abstract
Junki Nagakubo, Masaaki Hirakawa, Takahiro Sawada, Tsutomu Nishihashi, Kazumasa Horita, Hirohiko Murakami
Abstract
Group III‐nitride nanocrystals are promising candidates for lighting applications. However, development of their colloidal quantum dots (QDs) has not progressed because of issues with the synthesis of indium nitride (InN) nanoparticles, such as the long reaction time and the generation of indium metal as a by‐product. Here, we propose a new synthetic method that can solve almost all of the above problems and improve the quality of InN nanocrystals. In addition, we demonstrate that Ga—In—N QDs and Zn—In—N QDs synthesized using the proposed method exhibit photoluminescence.
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Group III‐nitride nanocrystals are promising candidates for lighting applications. However, development of their colloidal quantum dots (QDs) has not progressed because of issues with the synthesis of indium nitride (InN) nanoparticles, such as the long reaction time and the generation of indium metal as a by‐product. Here, we propose a new synthetic method that can solve almost all of the above problems and improve the quality of InN nanocrystals. In addition, we demonstrate that Ga—In—N QDs and Zn—In—N QDs synthesized using the proposed method exhibit photoluminescence.
Key concepts: Quantum dot, Indium, Nanocrystal, Indium nitride, Photoluminescence, Nitride, Materials science, Nanotechnology