ScholarLens Back to search
2018•Unpublished venueRequires access

A modified behavior spice model for SiC BJT

Shiwei Liang, Jun Wang, Zhigao Peng, Guanghui Chen, Xin Yin, Z. John Shen, Linfeng Deng

Open publisher page 6 citations

Abstract

The current gain of a SiC BJT is greatly reduced at a small collector current due to the existence of surface recombination effect, while the Si BJT has no such phenomena. Therefore, the Gummel-Poon model is not suitable for a SiC BJT although it is widely used for a Si BJT. In this paper, a modified behavior SPICE model is proposed for a SiC BJT to accurately describe the dependence of its current gain on the collector current. An additional diode in parallel to the external terminals of base and emitter of a SiC BJT is used to describe the surface recombination effect. The model parameters have been extracted from experimental plots. SPICE simulations in a circuit simulator LTSPICE are used to verify the developed SPICE model. Good agreement between the model and experimental results has been obtained.

About this research paper

What this paper is about

The current gain of a SiC BJT is greatly reduced at a small collector current due to the existence of surface recombination effect, while the Si BJT has no such phenomena. Therefore, the Gummel-Poon model is not suitable for a SiC BJT although it is widely used for a Si BJT. In this paper, a modified behavior SPICE model is proposed for a SiC BJT to accurately describe the dependence of its current gain on the collector current. An additional diode in parallel to the external terminals of base and emitter of a SiC BJT is used to describe the surface recombination effect. The model parameters have been extracted from experimental plots. SPICE simulations in a circuit simulator LTSPICE are used to verify the developed SPICE model. Good agreement between the model and experimental results has been obtained.

Why it matters

OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The current gain of a SiC BJT is greatly reduced at a small collector current due to the existence of surface recombination effect, while the Si BJT has no such phenomena. Therefore, the Gummel-Poon model is not suitable for a SiC BJT although it is widely used for a Si BJT. In this paper, a modified behavior SPICE model is proposed for a SiC BJT to accurately describe the dependence of its current gain on the collector current. An additional diode in parallel to the external terminals of base and emitter of a SiC BJT is used to describe the surface recombination effect. The model parameters have been extracted from experimental plots. SPICE simulations in a circuit simulator LTSPICE are used to verify the developed SPICE model. Good agreement between the model and experimental results has been obtained.

Key concepts: Bipolar junction transistor, Spice, Materials science, Common emitter, Diode, Electronic circuit simulation, Electronic engineering, Optoelectronics

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
A modified behavior spice model for SiC BJT — Research Paper | ScholarLens