1994•European Solid-State Device Research ConferenceRequires access
Post-Etch Cleaning after Dry Etching the Emitter Windows to Improve the Bipolar Characteristics in a 0.5μm BiCMOS Process
Stefaan Decoutere, S. Vanhaelemeersch, L. Deferm, F. Vleugels, G. Vancuyck
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Abstract
The opening of 0.5μm wide emitter windows in the base oxide to fabricate quasiselfaligned poly emitter bipolar transistors involves a dry oxide etching. This paper shows how appropriate post-etch cleaning substantially improves the base current characteristics and the emitter resistance of poly emitter bipolar transistors of a 0.5μm BiCMOS process.