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2018•The Japan Society of Applied PhysicsRequires access

H+ ion implantation used to reduce temperature for activating B atoms implanted in silicon

Tomokazu Nagao, Yutaka Inouchi, Junichi Tatemichi, Keisuke Yasuta, Takuma Uehara, Masahiko Hasumi, Toshiyuki Sameshima

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Key concepts: Materials science, Silicon, Ion implantation, Ion, Optoelectronics, Engineering physics, Nanotechnology, Atomic physics

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