ScholarLens Back to search
2017•Unpublished venueRequires access

A 0.5 V low-voltage low-dropout regulator

Ding-Lan Shen, Ting-Ta Lee

Open publisher page 2 citations

Abstract

This work proposes a low-dropout (LDO) regulator to provide low supply voltage of 0.5 V with the input range from 0.7 V to 0.9 V. The reference voltage of this LDO regulator is generated with the zero temperature coefficient circuit composed by MOS transistors in the subthreshold condition. And the error amplifier utilizes the constant gate-source potential mirrored biasing techniques to cope with the wide variation in supply voltage before regulation. The 0.5 V output voltage is boosted with varying the bulk potential of the transistor to obtain the optimal performance between light load and heavy load with maximum output current of 50 mA. Fabricated with a CMOS 0.18-μm technology, this LDO regulator occupies the area of 633μm×630μm including pads. And the active area is 0.097 mm2.

About this research paper

What this paper is about

This work proposes a low-dropout (LDO) regulator to provide low supply voltage of 0.5 V with the input range from 0.7 V to 0.9 V. The reference voltage of this LDO regulator is generated with the zero temperature coefficient circuit composed by MOS transistors in the subthreshold condition. And the error amplifier utilizes the constant gate-source potential mirrored biasing techniques to cope with the wide variation in supply voltage before regulation. The 0.5 V output voltage is boosted with varying the bulk potential of the transistor to obtain the optimal performance between light load and heavy load with maximum output current of 50 mA. Fabricated with a CMOS 0.18-μm technology, this LDO regulator occupies the area of 633μm×630μm including pads. And the active area is 0.097 mm2.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This work proposes a low-dropout (LDO) regulator to provide low supply voltage of 0.5 V with the input range from 0.7 V to 0.9 V. The reference voltage of this LDO regulator is generated with the zero temperature coefficient circuit composed by MOS transistors in the subthreshold condition. And the error amplifier utilizes the constant gate-source potential mirrored biasing techniques to cope with the wide variation in supply voltage before regulation. The 0.5 V output voltage is boosted with varying the bulk potential of the transistor to obtain the optimal performance between light load and heavy load with maximum output current of 50 mA. Fabricated with a CMOS 0.18-μm technology, this LDO regulator occupies the area of 633μm×630μm including pads. And the active area is 0.097 mm2.

Key concepts: Dropout voltage, Low-dropout regulator, Regulator, Biasing, Voltage regulator, Subthreshold conduction, CMOS, Power supply rejection ratio

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
A 0.5 V low-voltage low-dropout regulator — Research Paper | ScholarLens