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2017•Applied Physics LettersRequires access

Epitaxial VO2 thin film-based radio-frequency switches with thermal activation

Jaeseong Lee, Daesu Lee, Sang June Cho, Jung‐Hun Seo, Dong Liu, Chang‐Beom Eom, Zhenqiang Ma

Open publisher page 27 citations

Abstract

In this paper, we report on the demonstration of thermally triggered “normally ON” radio-frequency (RF) switches based on epitaxial vanadium dioxide (VO2) thin films with a SnO2 template on (001) TiO2 substrates. Fast insulator-to-metal phase transition of the epitaxial VO2 at a relatively low temperature allowed RF switches made of the VO2 to exhibit sharp changes in the RF insertion loss during cooling and heating at 60 °C and 66 °C, respectively. The change of RF insertion loss due to phase transition is greater than 15 dB. The VO2 RF switches also completed the transition of S21 within less than 3 °C and showed a low-loss operation frequency of up to 24.2 GHz with a low insertion loss of −1.36 dB and isolation of 17.56 dB at 12.03 GHz, respectively. The demonstration suggests that epitaxial VO2-based RF switches can be used in switching elements up to Ku-band RF circuits.

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What this paper is about

In this paper, we report on the demonstration of thermally triggered “normally ON” radio-frequency (RF) switches based on epitaxial vanadium dioxide (VO2) thin films with a SnO2 template on (001) TiO2 substrates. Fast insulator-to-metal phase transition of the epitaxial VO2 at a relatively low temperature allowed RF switches made of the VO2 to exhibit sharp changes in the RF insertion loss during cooling and heating at 60 °C and 66 °C, respectively. The change of RF insertion loss due to phase transition is greater than 15 dB. The VO2 RF switches also completed the transition of S21 within less than 3 °C and showed a low-loss operation frequency of up to 24.2 GHz with a low insertion loss of −1.36 dB and isolation of 17.56 dB at 12.03 GHz, respectively. The demonstration suggests that epitaxial VO2-based RF switches can be used in switching elements up to Ku-band RF circuits.

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Available abstract

In this paper, we report on the demonstration of thermally triggered “normally ON” radio-frequency (RF) switches based on epitaxial vanadium dioxide (VO2) thin films with a SnO2 template on (001) TiO2 substrates. Fast insulator-to-metal phase transition of the epitaxial VO2 at a relatively low temperature allowed RF switches made of the VO2 to exhibit sharp changes in the RF insertion loss during cooling and heating at 60 °C and 66 °C, respectively. The change of RF insertion loss due to phase transition is greater than 15 dB. The VO2 RF switches also completed the transition of S21 within less than 3 °C and showed a low-loss operation frequency of up to 24.2 GHz with a low insertion loss of −1.36 dB and isolation of 17.56 dB at 12.03 GHz, respectively. The demonstration suggests that epitaxial VO2-based RF switches can be used in switching elements up to Ku-band RF circuits.

Key concepts: Insertion loss, Radio frequency, RF switch, Materials science, Epitaxy, Optoelectronics, Metal–insulator transition, Thin film

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