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2017•Journal of Photopolymer Science and TechnologyOpen access

EUVL: Challenges to Manufacturing Insertion

Obert R. Wood

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Abstract

Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the seven nm technology node and beyond. The advantages of EUV lithography are its superior pattern fidelity, wider process windows, and potential for extendibility to future nodes. The disadvantages of EUV lithography are its higher costs and complexity (than ArFi lithography) and the relative immaturity of its supporting infrastructure.

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Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the seven nm technology node and beyond. The advantages of EUV lithography are its superior pattern fidelity, wider process windows, and potential for extendibility to future nodes. The disadvantages of EUV lithography are its higher costs and complexity (than ArFi lithography) and the relative immaturity of its supporting infrastructure.

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Available abstract

Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the seven nm technology node and beyond. The advantages of EUV lithography are its superior pattern fidelity, wider process windows, and potential for extendibility to future nodes. The disadvantages of EUV lithography are its higher costs and complexity (than ArFi lithography) and the relative immaturity of its supporting infrastructure.

Key concepts: Extreme ultraviolet lithography, Lithography, Computational lithography, Materials science, Photomask, Next-generation lithography, Multiple patterning, X-ray lithography

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