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High voltage-capacitance characteristics measurement for SiC-JFET -- Circuit for applying high voltage and gate voltage to SiC-JFET

Syuntaro Matsuzaki, Tsuyoshi Funaki, Hikihara Takashi

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Key concepts: JFET, Materials science, Optoelectronics, Capacitance, High voltage, Voltage, Electrical engineering, Silicon carbide

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High voltage-capacitance characteristics measurement for SiC-JFET -- Circuit for applying high voltage and gate voltage to SiC-JFET — Research Paper | ScholarLens