Study on Power Characteristics of SiC Schottky Gate JFET

A novel structure of SiC junction field effect transistor(JFET) was proposed,in which Schottky contact,instead of P+-type gate,was used to reduce process complexity and improve performance of the device.Numerical model of the device was built,and power characteristics of SiC JFET with different structural parameters were simulated.It has been shown that,compared to PN junction gate,Schottky gate structure could effectively reduce on-state resistance of SiC JFET,and compared to bipolar-mode SiC JFET with conventional gate structure,injection of carriers into gate area of SiC Schottky-gate JFET at forward bias could also reduce its on-state resistance effectively,and make compromise between on-state and off-state characteristics,without increasing switching time.