2017•대한전자공학회 학술대회Requires access

Design of an efficient RF-DC voltage multiplier for RF Energy Harvesting Applications

Danial Khan, Hamed Abbasizadeh, Zaffar Hayat Nawaz Khan, Truong Thi Kim Nga, SangYun Kim, Ho Cheol Ryu, Kang Yoon Lee

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Abstract

In this paper, a RF-DC voltage multiplier is presented to efficiently convert RF signals to DC voltages. The proposed circuit uses an internal threshold voltage cancellation (IVC) scheme with auxiliary block to reduce the threshold voltage of forward-biased transistors and minimizes the reverse leakage current of the reverse-biased by dynamically controlling the gate-source voltage of the transistors in the main rectification chain. The proposed circuit is designed in 0.18 um CMOS technology. A three-stage voltage multiplier results in a maximum power conversion efficiency (PCE) of 49.1% at input power level of 0 dBm and at frequency of 900 MHz. The proposed circuit produces an output voltage of 4.94 V at 50 KΩ load.

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What this paper is about

In this paper, a RF-DC voltage multiplier is presented to efficiently convert RF signals to DC voltages. The proposed circuit uses an internal threshold voltage cancellation (IVC) scheme with auxiliary block to reduce the threshold voltage of forward-biased transistors and minimizes the reverse leakage current of the reverse-biased by dynamically controlling the gate-source voltage of the transistors in the main rectification chain. The proposed circuit is designed in 0.18 um CMOS technology. A three-stage voltage multiplier results in a maximum power conversion efficiency (PCE) of 49.1% at input power level of 0 dBm and at frequency of 900 MHz. The proposed circuit produces an output voltage of 4.94 V at 50 KΩ load.

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Available abstract

In this paper, a RF-DC voltage multiplier is presented to efficiently convert RF signals to DC voltages. The proposed circuit uses an internal threshold voltage cancellation (IVC) scheme with auxiliary block to reduce the threshold voltage of forward-biased transistors and minimizes the reverse leakage current of the reverse-biased by dynamically controlling the gate-source voltage of the transistors in the main rectification chain. The proposed circuit is designed in 0.18 um CMOS technology. A three-stage voltage multiplier results in a maximum power conversion efficiency (PCE) of 49.1% at input power level of 0 dBm and at frequency of 900 MHz. The proposed circuit produces an output voltage of 4.94 V at 50 KΩ load.

Key concepts: Voltage multiplier, Electrical engineering, Voltage, CMOS, Overdrive voltage, Radio frequency, Transistor, Voltage doubler

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