2016•The Japan Society of Applied PhysicsRequires access

Characterization of Al 2 O 3 /GaN structures using n-GaN layer grown on GaN substrate

Shota Toiya, Tamotsu Hasizume

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Key concepts: Materials science, Layer (electronics), Characterization (materials science), Substrate (aquarium), Optoelectronics, Gallium nitride, Nanotechnology, Oceanography

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Characterization of Al 2 O 3 /GaN structures using n-GaN layer grown on GaN substrate — Research Paper | ScholarLens