High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradations
Kim Daejung, Yongchan Kim, Suwon Lee, Moon Sung Kang, Do Hwan Kim, Hojin Lee
Abstract
Kim Daejung, Yongchan Kim, Suwon Lee, Moon Sung Kang, Do Hwan Kim, Hojin Lee
Abstract
In this paper, we propose a novel voltage programmed pixel circuit based on amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for active-matrix organic light-emitting displays. Through the extensive simulation work based on a-IGZO TFT and OLED models, we confirm that the proposed pixel circuit can compensate for threshold voltage variations of TFTs and OLED degradation over wide dynamic range (~104) of OLED current as well as achieve a high pixel aperture ratio with the suppressed OLED current error rate below 9%.
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In this paper, we propose a novel voltage programmed pixel circuit based on amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for active-matrix organic light-emitting displays. Through the extensive simulation work based on a-IGZO TFT and OLED models, we confirm that the proposed pixel circuit can compensate for threshold voltage variations of TFTs and OLED degradation over wide dynamic range (~104) of OLED current as well as achieve a high pixel aperture ratio with the suppressed OLED current error rate below 9%.
Key concepts: OLED, Thin-film transistor, Threshold voltage, Materials science, Optoelectronics, AMOLED, Active matrix, Pixel