M. Lu, E.Y. Ma, J. C. Sturm, S. Wagner
Abstract
We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs.
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We report the fabrication of a video-brightness, active-matrix organic LED (AMOLED), two-transistor-pixel based on amorphous silicon (a-Si) TFT technology, with a maximum process temperature of 350 C. The process should be compatible with existing a-Si TFT manufacturing technology for AMLCDs.
Key concepts: Thin-film transistor, AMOLED, Active matrix, OLED, Materials science, Amorphous silicon, Fabrication, Oxide thin-film transistor