2014•IEEE Transactions on Electron DevicesRequires access
Modeling of Wide-Bandgap Power Semiconductor Devices—Part II
Enrico Santi, Kang Peng, H. Alan Mantooth, J.L. Hudgins
Open publisher page 143 citations
Abstract
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.