Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Tibor Grasser, Michael Waltl, Katja Puschkarsky, Bernhard Stampfer, G. Rzepa, Gregor Pobegen, H. Reisinger, Hiroaki Arimura, B. Kaczer
Abstract
Tibor Grasser, Michael Waltl, Katja Puschkarsky, Bernhard Stampfer, G. Rzepa, Gregor Pobegen, H. Reisinger, Hiroaki Arimura, B. Kaczer
Abstract
Contrary to irradiation damage, where the post-irradiation build-up of degradation is a commonly reported feature, degradation after BTI stress typically recovers monotonically. However, occasional reports on irregularities during recovery have been published. We will show here that - consistent with a gate-sided hydrogen release mechanism - additional degradation can apparently build-up during recovery also after BTI stress, which can under certain circumstances even exceed the post-stress degradation levels. This additional degradation may invalidate existing lifetime extrapolation methods and must therefore be carefully understood. Our results demonstrate that although post-stress degradation build-up is only visible under certain conditions, it is an essential feature of BTI and thus provides important clues on its microscopic origin.
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Contrary to irradiation damage, where the post-irradiation build-up of degradation is a commonly reported feature, degradation after BTI stress typically recovers monotonically. However, occasional reports on irregularities during recovery have been published. We will show here that - consistent with a gate-sided hydrogen release mechanism - additional degradation can apparently build-up during recovery also after BTI stress, which can under certain circumstances even exceed the post-stress degradation levels. This additional degradation may invalidate existing lifetime extrapolation methods and must therefore be carefully understood. Our results demonstrate that although post-stress degradation build-up is only visible under certain conditions, it is an essential feature of BTI and thus provides important clues on its microscopic origin.
Key concepts: Degradation (telecommunications), Stress (linguistics), Hydrogen, Materials science, Extrapolation, Irradiation, Computer science, Chemistry