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2016•The Japan Society of Applied PhysicsRequires access

Period of stripe-mask dependence on facet-structure of selective area growth of GaN by Hydride Vapor Phase Epitaxy

Shin Goubara, Kota Yukizane, Tohoru Matsubara, Norihiro Itagaki, Narihito Okada, Keisuke Yamane, Kazuyuki Tadatomo

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Key concepts: Materials science, Facet (psychology), Epitaxy, Hydride, Vapor phase, Optoelectronics, Phase (matter), Nanotechnology

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Period of stripe-mask dependence on facet-structure of selective area growth of GaN by Hydride Vapor Phase Epitaxy — Research Paper | ScholarLens