2015•The Japan Society of Applied PhysicsRequires access

Trap distribution on MOCVD-grown n-GaN epitaxial wafer on GaN substrate

Kazuki Miyamoto

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Key concepts: Materials science, Metalorganic vapour phase epitaxy, Epitaxy, Wafer, Optoelectronics, Trap (plumbing), Substrate (aquarium), Gallium nitride

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Trap distribution on MOCVD-grown n-GaN epitaxial wafer on GaN substrate — Research Paper | ScholarLens