Few-Layer MoS2 Thin Films Grown by Chemical Vapor Deposition

Due to their unique material properties, 2D semiconductors such as MoS 2 have recently attracted significant research interests for few applications including next generation nanoelectronics, flexible and transparent electronics, and optoelectronics.In this MS thesis research, we carried out studies on carrier mobility and transport, ohmic contacts, and gate dielectrics on few layer MoS 2 for the purposes of developing high performance 2D MoS 2 MOSFETs.Specifically, using the space charge model, we investigated the carrier mobility of few-layer MoS 2 grown by chemical vapor deposition (CVD) on sapphire substrates.An electron mobility of 118 cm 2 /Vs has been demonstrated on structures with transmission line model (TLM) patterns.We also developed a new method to measure and calculate the contact resistance for non-uniform few-layer MoS 2 grown by CVD.A specific contact resistivity of 8.4×10 -5 Ωcm 2 has been demonstrated on Ti/Au contacts on essentially intrinsic CVD grown few-layer MoS 2 that were processed by plasma ion bombardment before metallization and annealed by rapid thermal annealing (RTA).Furthermore, we performed a temperature dependent conductance study of MoS 2 .The preliminary result suggests that the carrier transport in the CVD grown few-layer MoS 2 is Efros-Shklovskii variable range hopping.Finally, an atomic layer deposition (ALD) process has been optimized for the deposition of Al 2 O 3 on MoS 2 as the gate dielectric for future MOSFET development.iii Dedication This document is dedicated to my family.I would like to