ScholarLens Back to search
2013•Unpublished venueRequires access

Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate

Kuldip Singh, Ashok S. Chauhan, Sonam Joshi, Arun Kumar Sharma, Pawan Kumar, Sumitra Singh, PK Prajapati, Bhoopendra Kumar Kushwaha, Subodh Johri, Chenna Dhanavantri, Monika Rana, Meenakshi Chouhan

Open publisher page 1 citations

Abstract

In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (Vth) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.

About this research paper

What this paper is about

In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (Vth) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.

Why it matters

OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (Vth) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.

Key concepts: Sapphire, Light-emitting diode, Metalorganic vapour phase epitaxy, Optoelectronics, Materials science, Fabrication, Epitaxy, Chemical vapor deposition

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate — Research Paper | ScholarLens