B. Gerber, J. C. Martin, J. Fellrath
Abstract
A 1.5 V, single-supply, one-transistor p-ch CMOS EEPROM array has been developed. Negative write and erase voltages of -28V are generated on-chip by voltage multipliers and fed by a 1.5 V logic to the matrix array. Erase and writing times are 25 ms. Endurance is 104-105cycles.
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A 1.5 V, single-supply, one-transistor p-ch CMOS EEPROM array has been developed. Negative write and erase voltages of -28V are generated on-chip by voltage multipliers and fed by a 1.5 V logic to the matrix array. Erase and writing times are 25 ms. Endurance is 104-105cycles.
Key concepts: EEPROM, CMOS, Transistor, Chip, EPROM, Electrical engineering, Voltage, Computer science