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A fully modular 1 μm CMOS technology incorporating EEPROM, EPROM and interpoly capacitors

P. Cacharelis, Michael Hart, G.R. Wolstenholme, R.D. Carpenter, I. Johnson, M. Manley

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Abstract

This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly capacitor. The single poly EPROM [1] has been adopted to simplify the integration issues; the three modules (EEPROM, EPROM and A/D) can be combined in any combination without affecting their electrical performance.

About this research paper

What this paper is about

This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly capacitor. The single poly EPROM [1] has been adopted to simplify the integration issues; the three modules (EEPROM, EPROM and A/D) can be combined in any combination without affecting their electrical performance.

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Available abstract

This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly capacitor. The single poly EPROM [1] has been adopted to simplify the integration issues; the three modules (EEPROM, EPROM and A/D) can be combined in any combination without affecting their electrical performance.

Key concepts: EPROM, EEPROM, Modular design, Capacitor, CMOS, Computer science, Non-volatile memory, Electrical engineering

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