A. Abare, S. Keller, M. Mack, L. A. Coldren, Steven P. DenBaars
Abstract
InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.
Key concepts: Quantum well, Optoelectronics, Diode, Materials science, Laser, Wide-bandgap semiconductor, Light-emitting diode, Gallium nitride