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2016•Journal of Physics Conference SeriesOpen access

Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit

Dmitrii Vladimirovich Sidelev, A. V. Yuryeva, В. П. Кривобоков, A.S. Shabunin, M. S. Syrtanov, Zhanumgyl Koishybayeva

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Abstract

This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

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What this paper is about

This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

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Available abstract

This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.

Key concepts: High-power impulse magnetron sputtering, Sputter deposition, Materials science, Cavity magnetron, Sputtering, Deposition (geology), Optoelectronics, Pulsed DC

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