2016•Journal of Nanoscience and NanotechnologyRequires access

Semipolar (11–22) InGaN-Based Light-Emitting Diodes with Low Defects Grown on m-Plane Sapphire Using Metalorganic Chemical Vapor Epitaxy

Jongjin Jang, Kyu-Seung Lee, Daehong Min, Jaehwan Kim, Sooryong Chae, Gyungbae Lee, Okhyun Nam

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Key concepts: Materials science, Epitaxy, Sapphire, Optoelectronics, Metalorganic vapour phase epitaxy, Diode, Light-emitting diode, Chemical vapor deposition

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Semipolar (11–22) InGaN-Based Light-Emitting Diodes with Low Defects Grown on m-Plane Sapphire Using Metalorganic Chemical Vapor Epitaxy — Research Paper | ScholarLens