2010•Acta Scientiarum Naturalium Universitatis SunyatseniRequires access

Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation

边历峰, 金朝

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Key concepts: Quantum dot, Excitation, Materials science, Optoelectronics, Gallium arsenide, Layer (electronics), Relaxation (psychology), Condensed matter physics

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Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation — Research Paper | ScholarLens