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Physical-Based Simulation of a GaN High Electron Mobility Transistor Devices

Sevda Aliparast, Peiman Aliparast

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Key concepts: High-electron-mobility transistor, Materials science, Optoelectronics, Transistor, Induced high electron mobility transistor, Electron mobility, Semiconductor, Wide-bandgap semiconductor

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Physical-Based Simulation of a GaN High Electron Mobility Transistor Devices — Research Paper | ScholarLens