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One-dimensional transport in quantum well wire-high electron mobility transistor

Perng-Fei Yuh, K. L. Wang

Open publisher page 27 citations

Abstract

A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

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What this paper is about

A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

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OpenAlex reports 27 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

Key concepts: Induced high electron mobility transistor, Electron mobility, Transistor, Field-effect transistor, Fermi gas, Electron, Scattering, Impurity

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