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FeFET and ferroelectric random access memories

Hiroshi Ishiwara

Open publisher page 7 citations

Abstract

This chapter presents both the history and the current status of ferroelectric random access memory (FeRAM). First, it states that there are two types of FeRAMs (capacitor-type and FET-type (FeFET)) and that only the capacitor-type FeRAM is now commercially available. Section 2 discusses the properties of ferroelectric films such as Pb(Zr,Ti)O3, SrBi2Ta2O9, and BiFeO3 from a viewpoint of FeRAM application. Section 3 describes cell structures and operation principle of the capacitor-type FeRAMs. It is also explains that some new cell structures have been proposed in addition to the conventional 1T1C and 2T2C-type cells. Section 4 discusses the characteristics of FeFETs, citing that improvement of the data retention characteristics is one of the most important issues for commercializing FeFETs.

About this research paper

What this paper is about

This chapter presents both the history and the current status of ferroelectric random access memory (FeRAM). First, it states that there are two types of FeRAMs (capacitor-type and FET-type (FeFET)) and that only the capacitor-type FeRAM is now commercially available. Section 2 discusses the properties of ferroelectric films such as Pb(Zr,Ti)O3, SrBi2Ta2O9, and BiFeO3 from a viewpoint of FeRAM application. Section 3 describes cell structures and operation principle of the capacitor-type FeRAMs. It is also explains that some new cell structures have been proposed in addition to the conventional 1T1C and 2T2C-type cells. Section 4 discusses the characteristics of FeFETs, citing that improvement of the data retention characteristics is one of the most important issues for commercializing FeFETs.

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Available abstract

This chapter presents both the history and the current status of ferroelectric random access memory (FeRAM). First, it states that there are two types of FeRAMs (capacitor-type and FET-type (FeFET)) and that only the capacitor-type FeRAM is now commercially available. Section 2 discusses the properties of ferroelectric films such as Pb(Zr,Ti)O3, SrBi2Ta2O9, and BiFeO3 from a viewpoint of FeRAM application. Section 3 describes cell structures and operation principle of the capacitor-type FeRAMs. It is also explains that some new cell structures have been proposed in addition to the conventional 1T1C and 2T2C-type cells. Section 4 discusses the characteristics of FeFETs, citing that improvement of the data retention characteristics is one of the most important issues for commercializing FeFETs.

Key concepts: Ferroelectric RAM, Ferroelectricity, Capacitor, Ferroelectric capacitor, Materials science, Random access memory, Section (typography), Electrical engineering

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