1978•Unpublished venueRequires access

Suppression of Anomalous Drain Current in Short Channel MOSFET

M. Konaka, Hiroshi Iwai, Yoshio Nishi

Abstract

The current voltage characteristics of short channel nMOSFET in the subthreshold region is investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve the subthreshold characteristics. Structure optimization for the deeply ion-implanted short channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which are almost comparable with the long channel MOSFET.

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Available abstract

Key concepts: Subthreshold conduction, MOSFET, Subthreshold slope, Materials science, Channel (broadcasting), Threshold voltage, Channel length modulation, Current (fluid)