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2013•Unpublished venueRequires access

Global variability of UTBB MOSFET in subthreshold

S. Makovejev, Babak Kazemi Esfeh, F. Andrieu, Jean‐Pierre Raskin, Denis Flandre, Valeriya Kilchytska

Open publisher page 1 citations

Abstract

Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.

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What this paper is about

Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.

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Available abstract

Global variability of UTBB MOSFETs in subthresh-old and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.

Key concepts: Subthreshold conduction, Drain-induced barrier lowering, Subthreshold slope, Threshold voltage, MOSFET, Current (fluid), Voltage, Logic gate

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