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Increasing the current driving capability of epitaxial Schottky-barrier diodes using high-energy implantation

C.T. Chuang, G.P. Li, D.D. Tang, Tak H. Ning, Maurizio Arienzo

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Abstract

A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of PtSi high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7- µm 2.0 × 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 × 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics.

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What this paper is about

A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of PtSi high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7- µm 2.0 × 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 × 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics.

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Available abstract

A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of PtSi high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7- µm 2.0 × 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 × 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics.

Key concepts: Schottky diode, Diode, Equivalent series resistance, Epitaxy, Schottky barrier, Materials science, Optoelectronics, Analytical Chemistry (journal)

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