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The electric properties of GaAs Schottky diode contining InAs self-assembled quantum dots

Jg Zhao, Bokai Shao, Wang Th

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Abstract

The properties of current transport in InAs/GaAs self-assembled quantum dots and the influence of schottky diode are investigated. Hystereses and steps contact with charging and discharging of electrons in the quantum dots. Hystereses are arising from the charged quantum dots that block electrons. All the steps are arising from that the electrons resonant tunnel out of the quantum dots. The electrons that come out of quantum dots affect the current transport.

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What this paper is about

The properties of current transport in InAs/GaAs self-assembled quantum dots and the influence of schottky diode are investigated. Hystereses and steps contact with charging and discharging of electrons in the quantum dots. Hystereses are arising from the charged quantum dots that block electrons. All the steps are arising from that the electrons resonant tunnel out of the quantum dots. The electrons that come out of quantum dots affect the current transport.

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Available abstract

The properties of current transport in InAs/GaAs self-assembled quantum dots and the influence of schottky diode are investigated. Hystereses and steps contact with charging and discharging of electrons in the quantum dots. Hystereses are arising from the charged quantum dots that block electrons. All the steps are arising from that the electrons resonant tunnel out of the quantum dots. The electrons that come out of quantum dots affect the current transport.

Key concepts: Quantum dot, Quantum point contact, Schottky diode, Electron, Schottky barrier, Electro-absorption modulator, Diode, Quantum dot laser

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