2004•Unpublished venueRequires access

Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots

Wen‐Hao Chang, T. M. Hsu, Wen-Yen Chen, Hsiang‐Szu Chang, Nien-Tze Yeh, Jen‐Inn Chyi

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Abstract

The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.

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What this paper is about

The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.

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Available abstract

The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.

Key concepts: Quantum dot, Conductance, Condensed matter physics, Gallium arsenide, Electron, Spectroscopy, Quantum point contact, Admittance

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