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ChemInform Abstract: Suppression of Formation of Silicon Tetrachloride During Preparation of Silicon from Trichlorosilane.

Mohan K. Dongare, Imtiaz S. Mulla, Amitabha Sinha

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Abstract

Abstract The formation of SiCl4 poses a big problem in the effective chemical vapor deposition of silicon by hydrogenation of SiHCl3 in a Siemens type reactor.

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What this paper is about

Abstract The formation of SiCl4 poses a big problem in the effective chemical vapor deposition of silicon by hydrogenation of SiHCl3 in a Siemens type reactor.

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Available abstract

Abstract The formation of SiCl4 poses a big problem in the effective chemical vapor deposition of silicon by hydrogenation of SiHCl3 in a Siemens type reactor.

Key concepts: Trichlorosilane, Silicon tetrachloride, Chemistry, Silicon, Chemical vapor deposition, Chemical engineering, Nanotechnology, Organic chemistry

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ChemInform Abstract: Suppression of Formation of Silicon Tetrachloride During Preparation of Silicon from Trichlorosilane. — Research Paper | ScholarLens