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2011•Modern Electronics TechniqueRequires access

New Current-mode Curvature-compensated CMOS Bandgap

Sun Tian-xi

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Abstract

A new sub-1V curvature-compensated CMOS bandgap reference(BGR) circuit is presented.Different from the conventional bandgap reference,a third current is introduced to eliminate the temperature nonlinearity of VEB of parasitic p-n-p bipolar junction transistor in CMOS process.The proposed circuit was designed and simulated in a standard 0.18um CMOS process.The results show that the output reference voltage at 623 mV has a temperature coefficient of 4.2 ppm/℃ from-55 ℃ to +125 ℃,and a line regulation of 0.9 mV/V at 1～2.1 V is achieved.

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What this paper is about

A new sub-1V curvature-compensated CMOS bandgap reference(BGR) circuit is presented.Different from the conventional bandgap reference,a third current is introduced to eliminate the temperature nonlinearity of VEB of parasitic p-n-p bipolar junction transistor in CMOS process.The proposed circuit was designed and simulated in a standard 0.18um CMOS process.The results show that the output reference voltage at 623 mV has a temperature coefficient of 4.2 ppm/℃ from-55 ℃ to +125 ℃,and a line regulation of 0.9 mV/V at 1～2.1 V is achieved.

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Available abstract

A new sub-1V curvature-compensated CMOS bandgap reference(BGR) circuit is presented.Different from the conventional bandgap reference,a third current is introduced to eliminate the temperature nonlinearity of VEB of parasitic p-n-p bipolar junction transistor in CMOS process.The proposed circuit was designed and simulated in a standard 0.18um CMOS process.The results show that the output reference voltage at 623 mV has a temperature coefficient of 4.2 ppm/℃ from-55 ℃ to +125 ℃,and a line regulation of 0.9 mV/V at 1～2.1 V is achieved.

Key concepts: Bandgap voltage reference, Line regulation, CMOS, Silicon bandgap temperature sensor, Materials science, Optoelectronics, Temperature coefficient, Voltage reference

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