A bandgap voltage reference in 0.18µm CMOS technology
Javier Alejandro Martínez-Nieto, M.T. Sanz, Pedro Rosales, S. Celma
Abstract
Javier Alejandro Martínez-Nieto, M.T. Sanz, Pedro Rosales, S. Celma
Abstract
A low-temperature coefficient, curvature-compensated CMOS bandgap voltage reference (BGR) is presented in this paper. The design was implemented in standard 0.18μm CMOS process with 1.8V power supply. The compensation is achieved generating the negative temperature coefficient (TC) voltage with a quadratic temperature dependent current biasing a bipolar transistor. In addition, the design has a 4-bit trimming circuit to compensate for process variations. The output voltage is 1.225V and shows a TC lower than 2ppm/°C over a temperature range of 160°C (-20°C to 140°C). The bandgap reference consumes 620μW and its total layout area is 217×147μm2.
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A low-temperature coefficient, curvature-compensated CMOS bandgap voltage reference (BGR) is presented in this paper. The design was implemented in standard 0.18μm CMOS process with 1.8V power supply. The compensation is achieved generating the negative temperature coefficient (TC) voltage with a quadratic temperature dependent current biasing a bipolar transistor. In addition, the design has a 4-bit trimming circuit to compensate for process variations. The output voltage is 1.225V and shows a TC lower than 2ppm/°C over a temperature range of 160°C (-20°C to 140°C). The bandgap reference consumes 620μW and its total layout area is 217×147μm2.
Key concepts: Bandgap voltage reference, Temperature coefficient, CMOS, Voltage reference, Electrical engineering, Trimming, Voltage, Transistor