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Comparison of the g-ray radiation effect of SiGe HBT and Si BJT

Qian Pei-xin

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Abstract

The changes of DC electrical performances of SiGe HBT and Si BJT after 400 krad(Si)γ-ray dose irradiation are compared. For irradiated SiGe HBT, in general, Ib increases,Ic decreasesand the DC current gain has little change. For irradiated Si BJT, however, Ib increases, Ic increasesgenerally, the DC current gain decreases obviously. It is shown that SiGe HBT has better anti-irradiation performance than Si BJT. The mechanism of radiation-induced performance changes isdiscussed.

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The changes of DC electrical performances of SiGe HBT and Si BJT after 400 krad(Si)γ-ray dose irradiation are compared. For irradiated SiGe HBT, in general, Ib increases,Ic decreasesand the DC current gain has little change. For irradiated Si BJT, however, Ib increases, Ic increasesgenerally, the DC current gain decreases obviously. It is shown that SiGe HBT has better anti-irradiation performance than Si BJT. The mechanism of radiation-induced performance changes isdiscussed.

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Available abstract

The changes of DC electrical performances of SiGe HBT and Si BJT after 400 krad(Si)γ-ray dose irradiation are compared. For irradiated SiGe HBT, in general, Ib increases,Ic decreasesand the DC current gain has little change. For irradiated Si BJT, however, Ib increases, Ic increasesgenerally, the DC current gain decreases obviously. It is shown that SiGe HBT has better anti-irradiation performance than Si BJT. The mechanism of radiation-induced performance changes isdiscussed.

Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Irradiation, Materials science, Optoelectronics, Radiation, Electrical engineering, Transistor

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