Xing Zhang
Abstract
In this paper,NMOSFET with wide range of tilt angle of halo implant had been simulated and processed.It was found that HCE degraded more seriously with the higher tilt angle.We suggested a low tilt angle should be adopted considering the trap creation in gate oxide,due to the hot carrier injection.
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In this paper,NMOSFET with wide range of tilt angle of halo implant had been simulated and processed.It was found that HCE degraded more seriously with the higher tilt angle.We suggested a low tilt angle should be adopted considering the trap creation in gate oxide,due to the hot carrier injection.
Key concepts: Tilt (camera), Halo, Materials science, Degradation (telecommunications), Optoelectronics, Range (aeronautics), Trap (plumbing), Optics