2012Cailiao daobaoRequires access

Recent Advances in Metal-Organic Chemical Vapor Deposition

Jia Chengchang

Open publisher page 1 citations

Abstract

The general rules of metal-organic chemical vapor deposition(MOCVD) are introduced.The precursors and typical reactors apply to MOCVD are discussed.The recent progress and applications of MOCVD in compound semiconductor materials and thin film materials are reviewed.

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What this paper is about

The general rules of metal-organic chemical vapor deposition(MOCVD) are introduced.The precursors and typical reactors apply to MOCVD are discussed.The recent progress and applications of MOCVD in compound semiconductor materials and thin film materials are reviewed.

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Available abstract

The general rules of metal-organic chemical vapor deposition(MOCVD) are introduced.The precursors and typical reactors apply to MOCVD are discussed.The recent progress and applications of MOCVD in compound semiconductor materials and thin film materials are reviewed.

Key concepts: Metalorganic vapour phase epitaxy, Chemical vapor deposition, Materials science, Combustion chemical vapor deposition, Metal, Nanotechnology, Deposition (geology), Thin film

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