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Metal Organic Chemical Vapor Deposition (MOCVD) Perspectives and Prospects

John O. Williams

Open publisher page 12 citations

Abstract

Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐Tc superconductors and ferroelectric oxides.

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Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐Tc superconductors and ferroelectric oxides.

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Available abstract

Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐Tc superconductors and ferroelectric oxides.

Key concepts: Chemical vapor deposition, Metalorganic vapour phase epitaxy, Metal, Combustion chemical vapor deposition, Chemistry, Materials science, Deposition (geology), Inorganic chemistry

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