Research of deposition condition and structural properties of Nd-doped ZnO thin films grown by RF magnetron sputtering
Feng Pan
Abstract
Feng Pan
Abstract
The ZnO thin film and Nd-doped ZnO thin films were deposited on Si(111) substrate by RF magnetron sputtering technique.The relationships of microstructure,surface morphology and orientation of Nd-doped ZnO films with the deposition parameters,such as substrate temperature,oxygen partial pressure,and Nd-contents were investigated by X-ray diffraction(XRD) and atomic force microscopy(AFM).It is found that the orientation and microstructure of Nd-doped ZnO thin films are strongly affected by the deposition temperature and oxygen partial pressure and Nd-contents.Therefore,the various deposition conditions are further investigated and compared in detail to obtain the sputtering conditions: the substrate temperature of 300℃,Ar sputtering gases,the annealing temperature of 400℃.An Nd-doped ZnO thin films with high c-axis orientation are realized.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
The ZnO thin film and Nd-doped ZnO thin films were deposited on Si(111) substrate by RF magnetron sputtering technique.The relationships of microstructure,surface morphology and orientation of Nd-doped ZnO films with the deposition parameters,such as substrate temperature,oxygen partial pressure,and Nd-contents were investigated by X-ray diffraction(XRD) and atomic force microscopy(AFM).It is found that the orientation and microstructure of Nd-doped ZnO thin films are strongly affected by the deposition temperature and oxygen partial pressure and Nd-contents.Therefore,the various deposition conditions are further investigated and compared in detail to obtain the sputtering conditions: the substrate temperature of 300℃,Ar sputtering gases,the annealing temperature of 400℃.An Nd-doped ZnO thin films with high c-axis orientation are realized.
Key concepts: Materials science, Thin film, Microstructure, Sputter deposition, Sputtering, Partial pressure, Doping, Substrate (aquarium)